BC550C B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC550C B1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
500mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
5,000
$0.03184
$0.1592
BC550C B1G Product Details
BC550C B1G Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.The product comes in the supplier device package of TO-92.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BC550C B1G Features
the DC current gain for this device is 420 @ 2mA 5V the supplier device package of TO-92
BC550C B1G Applications
There are a lot of Taiwan Semiconductor Corporation BC550C B1G applications of single BJT transistors.