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BC556BZL1

BC556BZL1

BC556BZL1

ON Semiconductor

BC556BZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC556BZL1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2002
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureEUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC -65V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating-100mA
Frequency 280MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BC556
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product280MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage65V
Transition Frequency 280MHz
Collector Emitter Saturation Voltage-300mV
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) 5V
hFE Min 180
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:4075 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.541872$0.541872
10$0.511200$5.112
100$0.482264$48.2264
500$0.454966$227.483
1000$0.429213$429.213

BC556BZL1 Product Details

BC556BZL1 Overview


DC current gain in this device equals 180 @ 2mA 5V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.A maximum collector current of 100mA volts is possible.

BC556BZL1 Features


the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz

BC556BZL1 Applications


There are a lot of ON Semiconductor BC556BZL1 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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