2SCR502EBHZGTL Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 200mA.Parts of this part have transition frequencies of 360MHz.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
2SCR502EBHZGTL Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 300mV @ 10mA, 200mA
a transition frequency of 360MHz
2SCR502EBHZGTL Applications
There are a lot of ROHM Semiconductor 2SCR502EBHZGTL applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
