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2SCR502EBHZGTL

  • 2SCR502EBHZGTL
  • 2SCR502EBHZGTL

2SCR502EBHZGTL

2SCR502EBHZGTL

ROHM Semiconductor

2SCR502EBHZGTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR502EBHZGTL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE
Power - Max 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 200nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 360MHz
Frequency - Transition 360MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.358000 $0.358
10 $0.337736 $3.37736
100 $0.318619 $31.8619
500 $0.300584 $150.292
1000 $0.283570 $283.57
2SCR502EBHZGTL Product Details

2SCR502EBHZGTL Overview


DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 200mA.Parts of this part have transition frequencies of 360MHz.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.

2SCR502EBHZGTL Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 300mV @ 10mA, 200mA
a transition frequency of 360MHz

2SCR502EBHZGTL Applications


There are a lot of ROHM Semiconductor 2SCR502EBHZGTL applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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