BC558BBU Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC558BBU Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
BC558BBU Applications
There are a lot of ON Semiconductor BC558BBU applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
