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MPSW45A

MPSW45A

MPSW45A

ON Semiconductor

MPSW45A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSW45A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2009
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating1A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MPSW45A
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation1W
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 25000 @ 200mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A
Collector Emitter Breakdown Voltage50V
Transition Frequency 100MHz
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 1A
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1586 items

MPSW45A Product Details

MPSW45A Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25000 @ 200mA 5V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 2mA, 1A.Continuous collector voltage should be kept at 1A for high efficiency.Keeping the emitter base voltage at 12V can result in a high level of efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 100MHz is present in the part.When collector current reaches its maximum, it can reach 1A volts.

MPSW45A Features


the DC current gain for this device is 25000 @ 200mA 5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz

MPSW45A Applications


There are a lot of ON Semiconductor MPSW45A applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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