BC558BTAR Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 30VV - Maximum voltage.

BC558BTAR Features

the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA

BC558BTAR Applications

There are a lot of ON Semiconductor BC558BTAR applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver