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BC635

BC635

BC635

ON Semiconductor

BC635 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC635 Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 201mg
Operating Temperature 150°C TJ
Packaging Bulk
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 45V
Max Power Dissipation 1W
Current Rating 1A
Frequency 100MHz
Base Part Number BC635
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1W
Power - Max 1W
Gain Bandwidth Product 100MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 1A
Max Frequency 100MHz
Collector Emitter Saturation Voltage 500mV
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Height 5.33mm
Length 5.2mm
Width 4.19mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
BC635 Product Details

BC635 Overview


In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.Supplier device package TO-92-3 comes with the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Maximum collector currents can be below 1A volts.

BC635 Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-92-3

BC635 Applications


There are a lot of ON Semiconductor BC635 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

Related Part Number

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