MJE271 Overview

In this device, the DC current gain is 1500 @ 120mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 1.2mA, 120mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Parts of this part have transition frequencies of 6MHz.In extreme cases, the collector current can be as low as 2A volts.

MJE271 Features

the DC current gain for this device is 1500 @ 120mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 1.2mA, 120mA
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 6MHz

MJE271 Applications

There are a lot of ON Semiconductor MJE271 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting