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BC847BTT1

BC847BTT1

BC847BTT1

ON Semiconductor

BC847BTT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC847BTT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BC847*TT
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.033946 $0.033946
500 $0.024960 $12.48
1000 $0.020800 $20.8
2000 $0.019083 $38.166
5000 $0.017834 $89.17
10000 $0.016590 $165.9
15000 $0.016044 $240.66
50000 $0.015776 $788.8
BC847BTT1 Product Details

BC847BTT1 Overview


DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 100MHz in the part.As a result, it can handle voltages as low as 45V volts.The maximum collector current is 100mA volts.

BC847BTT1 Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz

BC847BTT1 Applications


There are a lot of ON Semiconductor BC847BTT1 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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