HD1520FX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
HD1520FX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOWATT218FX
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
64W
Base Part Number
HD1520
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
ISOLATED
Power - Max
64W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
5.5 @ 9A 5V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
3V @ 1.8A, 9A
Collector Emitter Breakdown Voltage
700V
Emitter Base Voltage (VEBO)
10V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.955866
$0.955866
10
$0.901760
$9.0176
100
$0.850717
$85.0717
500
$0.802563
$401.2815
1000
$0.757135
$757.135
HD1520FX Product Details
HD1520FX Overview
In this device, the DC current gain is 5.5 @ 9A 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 1.8A, 9A.Emitter base voltages of 10V can achieve high levels of efficiency.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
HD1520FX Features
the DC current gain for this device is 5.5 @ 9A 5V the vce saturation(Max) is 3V @ 1.8A, 9A the emitter base voltage is kept at 10V
HD1520FX Applications
There are a lot of STMicroelectronics HD1520FX applications of single BJT transistors.