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BC849BMTF

BC849BMTF

BC849BMTF

ON Semiconductor

BC849BMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC849BMTF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BC849
Power - Max 310mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 300MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.405090 $0.40509
10 $0.382160 $3.8216
100 $0.360528 $36.0528
500 $0.340121 $170.0605
1000 $0.320869 $320.869
BC849BMTF Product Details

BC849BMTF Overview


DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.There is no device package available from the supplier for this product.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.

BC849BMTF Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of SOT-23-3

BC849BMTF Applications


There are a lot of ON Semiconductor BC849BMTF applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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