BC849BMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC849BMTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BC849
Power - Max
310mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
300MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.405090
$0.40509
10
$0.382160
$3.8216
100
$0.360528
$36.0528
500
$0.340121
$170.0605
1000
$0.320869
$320.869
BC849BMTF Product Details
BC849BMTF Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.There is no device package available from the supplier for this product.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
BC849BMTF Features
the DC current gain for this device is 200 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA the supplier device package of SOT-23-3
BC849BMTF Applications
There are a lot of ON Semiconductor BC849BMTF applications of single BJT transistors.