BC856BDW1T3G

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Manufacturer part number:BC856BDW1T3G

Manufacturer:ON Semiconductor

Description:ON Semi BC856BDW1T3G Dual PNP Bipolar Transistor; 0.1 A; 65 V; 6-Pin SOT-363

Case Package:SOT-23

Datasheet:BC856BDW1T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-65V
Max Power Dissipation	380mW
Terminal Form	GULL WING
Current Rating	-100mA
Frequency	100MHz
Pin Count	6
Reference Standard	AEC-Q101
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Power Dissipation	380mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	100MHz
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	65V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage	65V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	-650mV
Max Breakdown Voltage	65V
Collector Base Voltage (VCBO)	80V
Emitter Base Voltage (VEBO)	-5V
hFE Min	220
Height	950μm
Length	2.08mm
Width	1.25mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free