BC858CDXV6T1G

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Manufacturer part number:BC858CDXV6T1G

Manufacturer:ON Semiconductor

Description:ON Semi BC858CDXV6T1G PNP Bipolar Transistor; 0.1 A; 30 V; 6-Pin SOT-563

Case Package:SOT-23

Datasheet:BC858CDXV6T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Max Power Dissipation	500mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	-100mA
Frequency	100MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	BC858CDXV6
Pin Count	6
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Power Dissipation	500mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	100MHz
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	30V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	420 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage	30V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	-650mV
Max Breakdown Voltage	30V
Collector Base Voltage (VCBO)	30V
Emitter Base Voltage (VEBO)	5V
hFE Min	420
Height	600μm
Length	1.7mm
Width	1.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free