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BCV27

BCV27

BCV27

ON Semiconductor

BCV27 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BCV27 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 1.2A
Base Part Number BCV27
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 350mW
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 220MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 30V
Frequency - Transition 220MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000
Height 930μm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.05434 $0.16302
6,000 $0.04725 $0.2835
15,000 $0.04016 $0.6024
30,000 $0.03780 $1.134
75,000 $0.03544 $2.658
150,000 $0.03150 $4.725
BCV27 Product Details

BCV27 Overview


In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100μA, 100mA.The emitter base voltage can be kept at 10V for high efficiency.Its current rating is 1.2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 220MHz.Single BJT transistor can be broken down at a voltage of 30V volts.The maximum collector current is 1.2A volts.

BCV27 Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1.2A
a transition frequency of 220MHz

BCV27 Applications


There are a lot of ON Semiconductor BCV27 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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