BCV27 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BCV27 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1.2A
Base Part Number
BCV27
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
350mW
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
220MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
30V
Frequency - Transition
220MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
10V
hFE Min
10000
Height
930μm
Length
2.92mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BCV27 Product Details
BCV27 Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100μA, 100mA.The emitter base voltage can be kept at 10V for high efficiency.Its current rating is 1.2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 220MHz.Single BJT transistor can be broken down at a voltage of 30V volts.The maximum collector current is 1.2A volts.
BCV27 Features
the DC current gain for this device is 20000 @ 100mA 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 100μA, 100mA the emitter base voltage is kept at 10V the current rating of this device is 1.2A a transition frequency of 220MHz
BCV27 Applications
There are a lot of ON Semiconductor BCV27 applications of single BJT transistors.