BCW60A_D87Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BCW60A_D87Z Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BCW60
Power - Max
350mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 5V
Current - Collector Cutoff (Max)
20nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
32V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
125MHz
BCW60A_D87Z Product Details
BCW60A_D87Z Overview
This device has a DC current gain of 120 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device exhibits a collector-emitter breakdown at 32V.
BCW60A_D87Z Features
the DC current gain for this device is 120 @ 2mA 5V the vce saturation(Max) is 550mV @ 1.25mA, 50mA
BCW60A_D87Z Applications
There are a lot of ON Semiconductor BCW60A_D87Z applications of single BJT transistors.