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BCW60A_D87Z

BCW60A_D87Z

BCW60A_D87Z

ON Semiconductor

BCW60A_D87Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BCW60A_D87Z Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BCW60
Power - Max 350mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 125MHz
BCW60A_D87Z Product Details

BCW60A_D87Z Overview


This device has a DC current gain of 120 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device exhibits a collector-emitter breakdown at 32V.

BCW60A_D87Z Features


the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA

BCW60A_D87Z Applications


There are a lot of ON Semiconductor BCW60A_D87Z applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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