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BCW61CMTF

BCW61CMTF

BCW61CMTF

ON Semiconductor

BCW61CMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BCW61CMTF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BCW61
Power - Max 350mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 100mA
BCW61CMTF Product Details

BCW61CMTF Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 2mA 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 550mV @ 1.25mA, 50mA.Product comes in the supplier's device package SOT-23-3.A 32V maximal voltage - Collector Emitter Breakdown is present in the device.

BCW61CMTF Features


the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the supplier device package of SOT-23-3

BCW61CMTF Applications


There are a lot of ON Semiconductor BCW61CMTF applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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