MMBT4356 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 10mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.The base voltage of the emitter can be kept at -5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-800mA).The maximum collector current is 800mA volts.

MMBT4356 Features

the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA

MMBT4356 Applications

There are a lot of ON Semiconductor MMBT4356 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting