BCW68GLT3G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 10mA 1V.A collector emitter saturation voltage of -1.5V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 30mA, 300mA.An emitter's base voltage can be kept at 5V to gain high efficiency.In this part, there is a transition frequency of 100MHz.During maximum operation, collector current can be as low as 800mA volts.

BCW68GLT3G Features

the DC current gain for this device is 120 @ 10mA 1V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BCW68GLT3G Applications

There are a lot of ON Semiconductor BCW68GLT3G applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter