PBSS4320TVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4320TVL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Active
Number of Terminations
3
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
JEDEC-95 Code
TO-236AB
Vce Saturation (Max) @ Ib, Ic
310mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
2A
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.06720
$0.672
PBSS4320TVL Product Details
PBSS4320TVL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 1A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A transition frequency of 100MHz is present in the part.This device displays a 20V maximum voltage - Collector Emitter Breakdown.
PBSS4320TVL Features
the DC current gain for this device is 220 @ 1A 2V the vce saturation(Max) is 310mV @ 300mA, 3A a transition frequency of 100MHz
PBSS4320TVL Applications
There are a lot of Nexperia USA Inc. PBSS4320TVL applications of single BJT transistors.