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BD239TU

BD239TU

BD239TU

ON Semiconductor

BD239TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD239TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Base Part Number BD239
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 30W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 2A
RoHS StatusRoHS Compliant
In-Stock:1366 items

BD239TU Product Details

BD239TU Overview


This device has a DC current gain of 15 @ 1A 4V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 200mA, 1A.The device exhibits a collector-emitter breakdown at 45V.

BD239TU Features


the DC current gain for this device is 15 @ 1A 4V
the vce saturation(Max) is 700mV @ 200mA, 1A

BD239TU Applications


There are a lot of ON Semiconductor BD239TU applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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