BD239TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD239TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Base Part Number
BD239
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
30W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
700mV @ 200mA, 1A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
2A
RoHS Status
RoHS Compliant
BD239TU Product Details
BD239TU Overview
This device has a DC current gain of 15 @ 1A 4V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 200mA, 1A.The device exhibits a collector-emitter breakdown at 45V.
BD239TU Features
the DC current gain for this device is 15 @ 1A 4V the vce saturation(Max) is 700mV @ 200mA, 1A
BD239TU Applications
There are a lot of ON Semiconductor BD239TU applications of single BJT transistors.