P2N2222ARL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.A collector emitter saturation voltage of 1V allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.Emitter base voltages of 6V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.There is no device package available from the supplier for this product.This device displays a 40V maximum voltage - Collector Emitter Breakdown.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
P2N2222ARL1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
the supplier device package of TO-92-3
P2N2222ARL1G Applications
There are a lot of ON Semiconductor P2N2222ARL1G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
