BD244ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD244ATU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD244
Power - Max
65W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 6A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
6A
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.321200
$3.3212
10
$3.133208
$31.33208
100
$2.955856
$295.5856
500
$2.788544
$1394.272
1000
$2.630701
$2630.701
BD244ATU Product Details
BD244ATU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 3A 4V.When VCE saturation is 1.5V @ 1A, 6A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220-3 contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.
BD244ATU Features
the DC current gain for this device is 15 @ 3A 4V the vce saturation(Max) is 1.5V @ 1A, 6A the supplier device package of TO-220-3
BD244ATU Applications
There are a lot of ON Semiconductor BD244ATU applications of single BJT transistors.