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BD244ATU

BD244ATU

BD244ATU

ON Semiconductor

BD244ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD244ATU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD244
Power - Max 65W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 6A
In-Stock:1781 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.321200$3.3212
10$3.133208$31.33208
100$2.955856$295.5856
500$2.788544$1394.272
1000$2.630701$2630.701

BD244ATU Product Details

BD244ATU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 3A 4V.When VCE saturation is 1.5V @ 1A, 6A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220-3 contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.

BD244ATU Features


the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 6A
the supplier device package of TO-220-3

BD244ATU Applications


There are a lot of ON Semiconductor BD244ATU applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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