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BD244ATU

BD244ATU

BD244ATU

ON Semiconductor

BD244ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD244ATU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD244
Power - Max 65W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 6A
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.321200 $3.3212
10 $3.133208 $31.33208
100 $2.955856 $295.5856
500 $2.788544 $1394.272
1000 $2.630701 $2630.701
BD244ATU Product Details

BD244ATU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 3A 4V.When VCE saturation is 1.5V @ 1A, 6A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220-3 contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.

BD244ATU Features


the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 6A
the supplier device package of TO-220-3

BD244ATU Applications


There are a lot of ON Semiconductor BD244ATU applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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