BDW83A-S Overview

DC current gain in this device equals 750 @ 6A 3V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 150mA, 15A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

BDW83A-S Features

the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V

BDW83A-S Applications

There are a lot of Bourns Inc. BDW83A-S applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver