BD437TG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD437TG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
36W
Peak Reflow Temperature (Cel)
260
Current Rating
4A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BD437
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
36W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
45V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
800mV
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.59000
$0.59
10
$0.52000
$5.2
100
$0.39900
$39.9
500
$0.31542
$157.71
1,000
$0.25234
$0.25234
BD437TG Product Details
BD437TG Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In the part, the transition frequency is 3MHz.A maximum collector current of 4A volts is possible.
BD437TG Features
the DC current gain for this device is 85 @ 500mA 1V a collector emitter saturation voltage of 800mV the vce saturation(Max) is 800mV @ 300mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 4A a transition frequency of 3MHz
BD437TG Applications
There are a lot of ON Semiconductor BD437TG applications of single BJT transistors.