BD442S Overview
In this device, the DC current gain is 40 @ 500mA 1V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -800mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.Maximum collector currents can be below 4A volts.
BD442S Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD442S Applications
There are a lot of ON Semiconductor BD442S applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
