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BD538K

BD538K

BD538K

ON Semiconductor

BD538K datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD538K Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 50W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 12MHz
BD538K Product Details

BD538K Overview


DC current gain in this device equals 40 @ 2A 2V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.TO-220-3 is the supplier device package for this product.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BD538K Features


the DC current gain for this device is 40 @ 2A 2V
the vce saturation(Max) is 800mV @ 600mA, 6A
the supplier device package of TO-220-3

BD538K Applications


There are a lot of ON Semiconductor BD538K applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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