BD538KTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD538KTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
50W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
800mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
12MHz
BD538KTU Product Details
BD538KTU Overview
This device has a DC current gain of 40 @ 2A 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 600mA, 6A.The product comes in the supplier device package of TO-220-3.Device displays Collector Emitter Breakdown (80V maximal voltage).
BD538KTU Features
the DC current gain for this device is 40 @ 2A 2V the vce saturation(Max) is 800mV @ 600mA, 6A the supplier device package of TO-220-3
BD538KTU Applications
There are a lot of ON Semiconductor BD538KTU applications of single BJT transistors.