BD677AS Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.8V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.8V @ 40mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In the part, the transition frequency is 3MHz.An input voltage of 60V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 4A volts.
BD677AS Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD677AS Applications
There are a lot of ON Semiconductor BD677AS applications of single BJT transistors.
- Muting
-
- Interface
-
- Inverter
-
- Driver
-
