MPS3646 Overview

DC current gain in this device equals 30 @ 30mA 400mV, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 30mA, 300mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 300mA.In this part, there is a transition frequency of 350MHz.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.

MPS3646 Features

the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz

MPS3646 Applications

There are a lot of ON Semiconductor MPS3646 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting