BDW24CTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDW24CTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BDW24
Power - Max
50W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
3V @ 60mA, 6A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
6A
BDW24CTU Product Details
BDW24CTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 2A 3V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 60mA, 6A.This product comes in a TO-220-3 device package from the supplier.The device has a 100V maximal voltage - Collector Emitter Breakdown.
BDW24CTU Features
the DC current gain for this device is 750 @ 2A 3V the vce saturation(Max) is 3V @ 60mA, 6A the supplier device package of TO-220-3
BDW24CTU Applications
There are a lot of ON Semiconductor BDW24CTU applications of single BJT transistors.