BDX34BTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDX34BTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-80V
Max Power Dissipation
70W
Current Rating
-10A
Base Part Number
BDX34
Number of Elements
1
Element Configuration
Single
Power Dissipation
70W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 6mA, 3A
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
-80V
hFE Min
750
Continuous Collector Current
-10A
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BDX34BTU Product Details
BDX34BTU Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 6mA, 3A.Continuous collector voltage should be kept at -10A for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
BDX34BTU Features
the DC current gain for this device is 750 @ 3A 3V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 2.5V @ 6mA, 3A the current rating of this device is -10A
BDX34BTU Applications
There are a lot of ON Semiconductor BDX34BTU applications of single BJT transistors.