BDP948E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
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BDP948E6327HTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BDP948
Pin Count
4
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
5W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
3A
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
RoHS Compliant
BDP948E6327HTSA1 Product Details
BDP948E6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 85 @ 500mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).100MHz is present in the transition frequency.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BDP948E6327HTSA1 Features
the DC current gain for this device is 85 @ 500mA 1V the vce saturation(Max) is 500mV @ 200mA, 2A a transition frequency of 100MHz
BDP948E6327HTSA1 Applications
There are a lot of Infineon Technologies BDP948E6327HTSA1 applications of single BJT transistors.