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BF421ZL1G

BF421ZL1G

BF421ZL1G

ON Semiconductor

BF421ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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BF421ZL1G Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2005
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 830mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -50mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BF421
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 60MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Current - Collector (Ic) (Max) 50mA
Transition Frequency 60MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -300V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
BF421ZL1G Product Details

BF421ZL1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 25mA 20V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -50mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Maximum collector currents can be below 50mA volts.

BF421ZL1G Features


the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -50mA
a transition frequency of 60MHz

BF421ZL1G Applications


There are a lot of ON Semiconductor BF421ZL1G applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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