BF421ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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BF421ZL1G Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2005
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
EUROPEAN PART NUMBER
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
830mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
-50mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BF421
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
60MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 25mA 20V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Current - Collector (Ic) (Max)
50mA
Transition Frequency
60MHz
Collector Emitter Saturation Voltage
-500mV
Collector Base Voltage (VCBO)
-300V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BF421ZL1G Product Details
BF421ZL1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 25mA 20V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -50mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Maximum collector currents can be below 50mA volts.
BF421ZL1G Features
the DC current gain for this device is 50 @ 25mA 20V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at 5V the current rating of this device is -50mA a transition frequency of 60MHz
BF421ZL1G Applications
There are a lot of ON Semiconductor BF421ZL1G applications of single BJT transistors.