BF721T1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BF721T1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-100mA
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
BF721
Pin Count
4
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Gain Bandwidth Product
60MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
800mV
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 25mA 20V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 5mA, 30mA
Collector Emitter Breakdown Voltage
300V
Current - Collector (Ic) (Max)
50mA
Transition Frequency
60MHz
Collector Emitter Saturation Voltage
-800mV
Collector Base Voltage (VCBO)
-300V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
BF721T1 Product Details
BF721T1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -800mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).A transition frequency of 60MHz is present in the part.A maximum collector current of 50mA volts can be achieved.
BF721T1 Features
the DC current gain for this device is 50 @ 25mA 20V a collector emitter saturation voltage of -800mV the vce saturation(Max) is 800mV @ 5mA, 30mA the emitter base voltage is kept at 5V the current rating of this device is -100mA a transition frequency of 60MHz
BF721T1 Applications
There are a lot of ON Semiconductor BF721T1 applications of single BJT transistors.