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BF721T1

BF721T1

BF721T1

ON Semiconductor

BF721T1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BF721T1 Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 1.5W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -100mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BF721
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 60MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 800mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 5mA, 30mA
Collector Emitter Breakdown Voltage 300V
Current - Collector (Ic) (Max) 50mA
Transition Frequency 60MHz
Collector Emitter Saturation Voltage -800mV
Collector Base Voltage (VCBO) -300V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
BF721T1 Product Details

BF721T1 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -800mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).A transition frequency of 60MHz is present in the part.A maximum collector current of 50mA volts can be achieved.

BF721T1 Features


the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 60MHz

BF721T1 Applications


There are a lot of ON Semiconductor BF721T1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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