2N5087BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5087BU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-50V
Max Power Dissipation
625mW
Current Rating
-100mA
Frequency
40MHz
Base Part Number
2N5087
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Gain Bandwidth Product
40MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100μA 5V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-3V
hFE Min
150
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2N5087BU Product Details
2N5087BU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100μA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -3V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A maximum collector current of 100mA volts is possible.
2N5087BU Features
the DC current gain for this device is 250 @ 100μA 5V the vce saturation(Max) is 300mV @ 1mA, 10mA the emitter base voltage is kept at -3V the current rating of this device is -100mA
2N5087BU Applications
There are a lot of ON Semiconductor 2N5087BU applications of single BJT transistors.