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BMS3003

BMS3003

BMS3003

ON Semiconductor

BMS3003 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

BMS3003 Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code 8542.39.00.01
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Number of Functions 1
Pin Count 3
JESD-30 Code R-XSFM-T3
Qualification Status Not Qualified
Power Dissipation-Max 2W Ta 40W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 6.5m Ω @ 39A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 20V
Current - Continuous Drain (Id) @ 25°C 78A Ta
Gate Charge (Qg) (Max) @ Vgs 285nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 78A
Interface IC Type BUFFER OR INVERTER BASED MOSFET DRIVER
High Side Driver NO
RoHS Status RoHS Compliant
BMS3003 Product Details

BMS3003 Description


BMS3003 is a -60v P-channel Silicon MOSFET. The onsemi BMS3003 can be applied for general-purpose switching device applications. The operating junction and storage temperature are between -55 and 150??. The MOSFET BMS3003 is in the TO-220ML(LS) package with 65W. 



BMS3003 Features


  • ON-resistance RDS(on)1 = 5.0m|? (typ)

  • Input capacitance Ciss = 13200pF (typ)

  • 4V drive

  • Drain to source voltage: -60v

  • Drain current(DC): -78A



BMS3003 Applications


  • Communication devices 

  • Band selectors in multi-band radios

  • Telecommunication

  • Computer motherboards

  • Remote controls for frequency settings  


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