TPC8113(TE12L,Q)

new-10%

Manufacturer part number:TPC8113(TE12L,Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans MOSFET P-CH Si 30V 11A 8-Pin SOP T/R

Case Package:SOT-23

Datasheet:TPC8113(TE12L,Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173, 4.40mm Width)
Number of Pins	8
Supplier Device Package	8-SOP (5.5x6.0)
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1W Ta
Power Dissipation	1.9W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	10mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 10V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V
Rise Time	6ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	120 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
Input Capacitance	4.5nF
Drain to Source Resistance	10mOhm
Rds On Max	10 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant