BS108G

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Manufacturer part number:BS108G

Manufacturer:ON Semiconductor

Description:BS108G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:BS108G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Current Rating	250mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8 Ω @ 100mA, 2.8V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	250mA Ta
Drive Voltage (Max Rds On,Min Rds On)	2V 2.8V
Vgs (Max)	±20V
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	250mA
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.25A
Drain-source On Resistance-Max	8Ohm
Drain to Source Breakdown Voltage	200V
RoHS Status	RoHS Compliant
Lead Free	Lead Free