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TSM1NB60SCT A3G

TSM1NB60SCT A3G

TSM1NB60SCT A3G

Taiwan Semiconductor Corporation

MOSFET N-CH 600V 500MA TO92

SOT-23

TSM1NB60SCT A3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 138pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA Tc
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant

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