BS170RL1G

new-10%

Manufacturer part number:BS170RL1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 0.5A TO-92

Case Package:SOT-23

Datasheet:BS170RL1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	EUROPEAN PART NUMBER
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Current Rating	500mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 10V
Current - Continuous Drain (Id) @ 25°C	500mA Ta
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	500mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.5A
Drain-source On Resistance-Max	5Ohm
Drain to Source Breakdown Voltage	60V
RoHS Status	RoHS Compliant
Lead Free	Lead Free