IPI11N03LA

new-10%

Manufacturer part number:IPI11N03LA

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 30A I2PAK

Case Package:SOT-23

Datasheet:IPI11N03LA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	25V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	30A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	52W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	52W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds	1358pF @ 15V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 5V
Rise Time	43ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.8 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0115Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	210A
Avalanche Energy Rating (Eas)	80 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free