BSR17A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.As you can see, the part has a transition frequency of 300MHz.Single BJT transistor can be broken down at a voltage of 40V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
BSR17A Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
BSR17A Applications
There are a lot of ON Semiconductor BSR17A applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
