MPSA06RLRMG Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The breakdown input voltage is 45V volts.Collector current can be as low as 500mA volts at its maximum.
MPSA06RLRMG Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA06RLRMG Applications
There are a lot of ON Semiconductor MPSA06RLRMG applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
