BSV52_D87Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BSV52_D87Z Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BSV52
Power - Max
225mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
12V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
400MHz
BSV52_D87Z Product Details
BSV52_D87Z Overview
This device has a DC current gain of 40 @ 10mA 1V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Product package SOT-23-3 comes from the supplier.The device exhibits a collector-emitter breakdown at 12V.
BSV52_D87Z Features
the DC current gain for this device is 40 @ 10mA 1V the vce saturation(Max) is 400mV @ 5mA, 50mA the supplier device package of SOT-23-3
BSV52_D87Z Applications
There are a lot of ON Semiconductor BSV52_D87Z applications of single BJT transistors.