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BSV52_D87Z

BSV52_D87Z

BSV52_D87Z

ON Semiconductor

BSV52_D87Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BSV52_D87Z Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BSV52
Power - Max 225mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 400MHz
BSV52_D87Z Product Details

BSV52_D87Z Overview


This device has a DC current gain of 40 @ 10mA 1V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Product package SOT-23-3 comes from the supplier.The device exhibits a collector-emitter breakdown at 12V.

BSV52_D87Z Features


the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the supplier device package of SOT-23-3

BSV52_D87Z Applications


There are a lot of ON Semiconductor BSV52_D87Z applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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