BUL45D2 Overview
In this device, the DC current gain is 10 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 460mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 12V allows for a high level of efficiency.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 13MHz.A maximum collector current of 5A volts is possible.
BUL45D2 Features
the DC current gain for this device is 10 @ 2A 1V
a collector emitter saturation voltage of 460mV
the vce saturation(Max) is 500mV @ 400mA, 2A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 13MHz
BUL45D2 Applications
There are a lot of ON Semiconductor BUL45D2 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
