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MJE13009G

MJE13009G

MJE13009G

ON Semiconductor

MJE13009G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE13009G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status CONSULT SALES OFFICE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation2W
Peak Reflow Temperature (Cel) 260
Current Rating12A
Frequency 4MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A 5V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 3A, 12A
Collector Emitter Breakdown Voltage400V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 8
Height 9.28mm
Length 10.28mm
Width 4.82mm
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2598 items

MJE13009G Product Details

MJE13009G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 8 @ 5A 5V DC current gain.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3A, 12A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 12A.As a result, the part has a transition frequency of 4MHz.During maximum operation, collector current can be as low as 12A volts.

MJE13009G Features


the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz

MJE13009G Applications


There are a lot of ON Semiconductor MJE13009G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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