BUT12TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BUT12TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
100W
Transistor Type
NPN
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.2A, 6A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
8A
BUT12TU Product Details
BUT12TU Overview
Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1.2A, 6A.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 400VV - Maximum voltage.
BUT12TU Features
the vce saturation(Max) is 1.5V @ 1.2A, 6A the supplier device package of TO-220-3
BUT12TU Applications
There are a lot of ON Semiconductor BUT12TU applications of single BJT transistors.