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2SAR553PT100

2SAR553PT100

2SAR553PT100

ROHM Semiconductor

2SAR553PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR553PT100 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SAR553
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 50mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 35mA, 700mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 320MHz
Transition Frequency 320MHz
Max Breakdown Voltage 50V
Frequency - Transition 320MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) -6V
hFE Min 180
Continuous Collector Current -2A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.076455 $0.076455
500 $0.056218 $28.109
1000 $0.046848 $46.848
2000 $0.042979 $85.958
5000 $0.040168 $200.84
10000 $0.037366 $373.66
15000 $0.036137 $542.055
50000 $0.035533 $1776.65
2SAR553PT100 Product Details

2SAR553PT100 Overview


In this device, the DC current gain is 180 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 35mA, 700mA.A constant collector voltage of -2A is necessary for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.As you can see, the part has a transition frequency of 320MHz.As a result, it can handle voltages as low as 50V volts.Maximum collector currents can be below 2A volts.

2SAR553PT100 Features


the DC current gain for this device is 180 @ 50mA 2V
the vce saturation(Max) is 400mV @ 35mA, 700mA
the emitter base voltage is kept at -6V
a transition frequency of 320MHz

2SAR553PT100 Applications


There are a lot of ROHM Semiconductor 2SAR553PT100 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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