2SAR553PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SAR553PT100 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SAR553
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 50mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 35mA, 700mA
Collector Emitter Breakdown Voltage
50V
Max Frequency
320MHz
Transition Frequency
320MHz
Max Breakdown Voltage
50V
Frequency - Transition
320MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
-6V
hFE Min
180
Continuous Collector Current
-2A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.076455
$0.076455
500
$0.056218
$28.109
1000
$0.046848
$46.848
2000
$0.042979
$85.958
5000
$0.040168
$200.84
10000
$0.037366
$373.66
15000
$0.036137
$542.055
50000
$0.035533
$1776.65
2SAR553PT100 Product Details
2SAR553PT100 Overview
In this device, the DC current gain is 180 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 35mA, 700mA.A constant collector voltage of -2A is necessary for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.As you can see, the part has a transition frequency of 320MHz.As a result, it can handle voltages as low as 50V volts.Maximum collector currents can be below 2A volts.
2SAR553PT100 Features
the DC current gain for this device is 180 @ 50mA 2V the vce saturation(Max) is 400mV @ 35mA, 700mA the emitter base voltage is kept at -6V a transition frequency of 320MHz
2SAR553PT100 Applications
There are a lot of ROHM Semiconductor 2SAR553PT100 applications of single BJT transistors.