2DB1386Q-13 Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 6V for high efficiency.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.When collector current reaches its maximum, it can reach 5A volts.
2DB1386Q-13 Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2DB1386Q-13 Applications
There are a lot of Diodes Incorporated 2DB1386Q-13 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
