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FCH023N65S3L4

FCH023N65S3L4

FCH023N65S3L4

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tube 23m Ω @ 37.5A, 10V ±30V 7160pF @ 400V 222nC @ 10V 650V TO-247-4

SOT-23

FCH023N65S3L4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-4
Weight 6.289g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET® III
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 595W Tc
Element Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 23m Ω @ 37.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 7.5mA
Input Capacitance (Ciss) (Max) @ Vds 7160pF @ 400V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 222nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 75A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.67000 $13.67
10 $12.42400 $124.24
450 $9.62831 $4332.7395
900 $8.57230 $7715.07
FCH023N65S3L4 Product Details

FCH023N65S3L4 Description

 

FCH023N65S3L4 N-channel MOSFET is based on an original, unique vertical structure. FCH023N65S3L4 MOSFET results in a dramatic reduction in the on-resistance. FCH023N65S3L4 ON Semiconductor is utilized in the switching power applications such as server/telecom power, EV charger, Cloud system, and industrial power applications.

 

 

FCH023N65S3L4 Features

 

100% Avalanche Tested

RoHS Compliant

Low Effective Output Capacitance

Ultra Low Gate Charg

Max. RDS(on) = 41m|?

 

 

FCH023N65S3L4 Applications

 

Telecom power

Cloud system

Industrial

Solar / UPS

Server power

EV charger


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